2N Transistor Datasheet pdf, 2N Equivalent. Parameters and Characteristics. 2N designed for generalpurpose switching and amplifier applications. DC Current Gain hFE = 4 Adc CollectorEmitter Saturation Voltage VCE(sat) = 2N Datasheet PDF Download – SILICON PNP TRANSISTOR, 2N data sheet.
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Modern successors to the 2N can be much more suitable in fast-switching circuits or high-end audio power amplifiers. The 2N is a silicon NPN power transistor intended datashret general purpose applications.
It has a transition frequency of 2.
2N equivalent datasheet & applicatoin notes – Datasheet Archive
With an “infinite” heatsink, that is: Since the early s, the 2N transistor has been heavily targeted by counterfeiters, who substitute much smaller silicon dies with lesser power ratings, use inferior mounting techniques, and fake the markings.
KD is a higher power equivalent used in Eastern Bloc countries, and is intended for general purpose applications. Modern 2N datasheets often, but not always, specify f T of 2. KD are packaged in a TO-3 case style called T41 by Teslait is a 20 amp80 voltwatt power transistor.
The 2N remains very popular as a series pass transistor in linear power supplies and is still used in for medium- current and high- power circuits generally, datasheer low frequency power converters although its use in audio power amplifiers and DC-to-AC inverters is now less common and its use in higher frequency switch-mode applications never was fatasheet practical.
The device is designed to operate with an efficient heatsink, but dtasheet must be taken to mount the device properly,    else physical damage or worsened power handling may result, especially with cases or heatsinks that are not perfectly flat. The 2Nwith a TO-3 case has slightly lower gain but significantly higher maximum ratings W, Vceo, daatsheet Amps.
This page was last edited on 22 Novemberat The frequency at which gain begins to drop off may be much lower, see below. The 2N is a much lower power version of the 2N, rated at 25 W55 V and 4 Abut became almost obsolete about the late s when many TO devices were withdrawn from mainstream manufacturers’s lists.
It was produced exclusively by the Czechoslovakian electronics company Tesla.
Commons category link from Wikidata. Variants with higher voltage ratings e.
2N2955 Datasheet, Equivalent, Cross Reference Search
The maximum collector-to-emitter voltage for the datashert, like other transistors, depends on the resistance path the external circuit provides between the base and emitter of the transistor; with ohms a 70 volt breakdown rating, V CERand the Collector-Emitter Sustaining voltage, V CEO susis given by ON Semiconductor. Retrieved 31 October Retrieved 7 November RCA by dataxheet changed their specification to give 2. It was introduced in the early s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mids.
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It is by now unlikely to actually obtain a genuine 2N transistor when using popular sales platforms such as Amazon or 2n295 classic electronics distributors are mostly still able to properly source them. With changes to semiconductor manufacturing technology, the original process became economically uncompetitive in the mids, and a similar device was created using epitaxial base technology. The robot builder’s bonanza 2nd ed. The historically-significant 2N was designed by Herb Meisel’s engineering group with RCA; it was the first multi-amp silicon power transistor to sell for less than one dollar, and became an industry workhorse standard.
It was second sourced by 2n9255 manufacturers; Texas Instruments listed a single-diffused mesa version of the device in an August datasheet. Build your own low-power transmitters: Other manufacturers around this time also would specify similar values e.
Also the higher frequency response has improved performance when used in audio amplifiers. The total power dissipation written P D in most American datasheets, P tot in European ones depends on the heatsink to which the 2N is connected.
The art of electronics 2m2955 ed. The team of design, production, 2n29955 applications engineers received RCA Electronic Components achievement awards in In the sixties and early seventies, Philips produced similar devices encapsulated in TO-3 packages under the reference BDY20 described as being for “hifi” purposes and BDY38 although the BDY38 has lower voltage ratings than the 2N An MJ PNPwhich is also manufactured using the epitaxial process today, is a complementary transistor to the 2N It often has a dqtasheet frequency of around 3.