BU2508DF DATASHEET PDF

BUDF. DESCRIPTION. ·Collector-Emitter Sustaining Voltage VCEO(SUS) = V (Min). ·High Switching Speed. ·Built-in Damper Diode. APPLICATIONS. BUDF. DESCRIPTION. ·With TO-3PFa package. ·High voltage,high speed. · Built-in damper diode. APPLICATIONS. ·For use in horizontal deflection circuits. BUDF datasheet, BUDF circuit, BUDF data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site for.

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Silicon diffused power transistor buaf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor in a plastic fullpack.

BUDF datasheet, Pinout ,application circuits Isc Silicon NPN Power Transistor

These are stress vu2508df only and operation of the device at these or at any other conditions above those given in dagasheet Characteristics sections of this specification is not implied. II Extension for repetitive pulse operation. Silicon diffused power transistor online from elcodis, view and download budf pdf bu25088df, diodes, rectifiers specifications. Forward bias safe operating area. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

This data sheet contains target or goal specifications for product development. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Budf transistor equivalent substitute crossreference search.

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BU2508DF Datasheet

Buaf transistor equivalent substitute crossreference search. Budf philips semiconductors, budf datasheet. Buaf datasheet, equivalent, cross reference search. SOT; The seating plane is electrically isolated from all terminals. Philips silicon diffused power transistor,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors.

BUDF Datasheet PDF – Tiger Electronic

Features exceptional tolerance to base drive and collector current load variations resulting in a dayasheet low worst case dissipation. July 6 Rev 1. Buaf datasheet, buaf npn highvoltage transistor datasheet, buy buaf transistor.

The information bu25508df in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without datwsheet. Buaf datasheet, buaf pdf, buaf data sheet, buaf manual, buaf pdf, buaf, datenblatt, electronics buaf, alldatasheet, free, datasheet.

Application information Where application information is given, it is advisory and does not form part of the specification. July 2 Rev 1. Silicon diffused power transistor buaf datasheet catalog.

BU2508DF Silicon Diffused Power Transistor

C 1 Turn-off current. Exposure to datadheet values for extended periods may affect device reliability. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Npn triple diffused buaf planar silicon transistor color tv horizontal output applicationsno damper diode to3pml.

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July 5 Rev 1.

C I Region of permissible DC operation. This data sheet contains final product specifications. Typical collector-emitter saturation voltage. Stress above one or more of the limiting values may cause permanent damage to the device.

Refer to mounting instructions for F-pack envelopes. July 1 Rev 1. Typical base-emitter saturation voltage.

Philips semiconductors product specification silicon diffused power transistor budf general description enhanced performance, new generation, highvoltage, highspeed switching npn transistor bbu2508df an integrated damper diode in a bu2508dr fullpack envelope.

No liability will be accepted by the publisher for any dtasheet of its use. Typical collector storage and fall time. Typical DC current gain.

High collectorbase voltagevcbov high speed switching. July 7 Rev 1. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.