BUZP datasheet, BUZP circuit, BUZP data sheet: SAVANTIC – Silicon NPN Power Transistors,alldatasheet, datasheet, Datasheet search site for. BUZP isc Silicon NPN Power Transistor. DESCRIPTIONHigh VoltageDARLINGTONIntegrated High Voltage Zener APPLICATIONSApplication in high. BUZP from STMicroelectronics, Inc.. Find the PDF Datasheet, Specifications and Distributor Information.

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Max output current is 4 A.

BU931ZP Datasheet, Equivalent, Cross Reference Search

Speciali- sing in advanced technologies and packages for demanding applications, SGS is particularly strong in the industrial, automotive and telecommunications sectors. This step down regulator shielded for EMI, provides local on-card regulation. Suitable control circuits can be found on page Individual transistors, diodes, capacitors and resistors can also be integrated. Ceramic Pin-grid arrays — 64,68,84,, and leads. SGS also offers packages of almost every type, ranging from the 8-pin small outline micropackage catasheet the lead Multiwatt plastic power package.

The high speed Z80H features 8 MHz clock operation. The family has a unique architecture, the main features of which are Operating System software support, Compiler support and memory ma- nagement. Olivetti 2, Agrate Brianza-ltaly Tel.: Lauderdale Orlando Kierulff Electronic Ft.

Pentawatt L Dual Power Op. Max 2 HSG 44 52 1. If you are interested in discussing custom chip designs contact your nearest sales office for more infor- mation. The GS-R VB is particularly suited for multiple output power supplies, because up to four units can be synchronized.


To be connected to GND 2 when not used. GNDout – Ground Common ground of high current path. The power dissipa- datasehet is equivalent to a non isolated SOT TO device mounted with external electrical isolation.

Here below are listed the S6 family products in design at the time of publication; new circuits will be added in the near future.

With its fast turnaround time and low development cost gate arrays is the ideal solution for low production volume design.

Max 2 HSG 46 2 6 52 2. For use in applications such as transportation or emergency lighting running from low voltage DC the power transistors for DC-DC converters page 49 will be suitable. Specifications mentioned in this publication are subject to change without notice.

BUZP Datasheet, Equivalent, Cross Reference Search. Transistor Catalog

Two versions of the CPU are available to match the family to a wide range of target applications from fast process control to large microcomputers. However, no responsibility is assumed for the consequences of its use nor for any infringement of patents or other rights of third parties which may result from its use. Plastic DIPS — 16,18,20,24,28,40 and 48 leads. Firstly there is the traditional antistatic stick commonly used for standard DIP packages.


BU Datasheet PDF

Each device is presented along with its essential electrical characteristics. The case is electrically connected to GND. GND 2 – Ground Common ground of high current path. This configuration also has the advantage of reducing the risk of lead bending during shipping — a real problem with standard DIP packages.

Reset voltage is high 5. The customer designs and evaluates the proposed design with the help of a series of development parts, each containing one or more of the library cells.

Datasheeets & Application Notes

This pin is connected to case. Their high gain makes them suitable for driving directly by SGS con- trol circuits, see page Lauderdale St. Matching PWM control circuits may be found on pages 56 to The HCMOS technology allows 3 to 6V supply dataeheet range, dayasheet power consumption and fully static operation, while the serial architecture gives significant contribution to reduce the die size.

Henrique Schaumann – CJ33 Tel.: The very large input volta- ge range allows flexibility in both professional and industrial applications.

Marshall Electronics Orlando Ft. Ceramic DIPs — 24,28,40,48 leads. Binary Counter with Sync.