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IRFP A, V, Ohm, N-Channel Power. MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced. IRFP A, V, Ohm, N-channel Power MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced. IRFP, SiHFP Vishay Siliconix. FEATURES. • Dynamic dV/dt Rating. • Repetitive Avalanche Rated. • Isolated Central Mounting Hole.

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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death.

Such statements are not binding statements about the suitability of products for a particular application.

Datasheet «IRFP440»

These dimensions are measured at the outermost extremes of the plastic body. Contour of slot optional.


Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.

Product names and markings noted herein may be trademarks of their respective owners. Dimension D and E do not include mold flash.

IRFP 데이터시트(PDF) – Vishay Siliconix

To the maximum extent permitted by applicable law, Vishay disclaims i any and all liability arising out of the application or use of any product, ii any and all liability, including without limitation special, consequential or incidental irdp440, and iii any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.

Mold flash shall not exceed 0. Drain Current Current regulator Same type as D. Repetitive rating; pulse width limited by maximum junction temperature see fig. Customers using or selling Vishay products not expressly indicated datashet use in such applications do so at their own risk.

Xian and Mingxin actually photo. Case Temperature tr td off tf Fig. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.


Please note that some Vishay documentation may still make reference to the IEC definition. It also provides greater creepage distance between pins to meet the requirements of most safety datashewt.

Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. B, Mar This datasheet is subject to change without notice. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.

Lead finish uncontrolled in L1. Thermal pad contour optional with dimensions D1 and E1. Products may be manufactured at one of several qualified locations.