IRFP A, V, Ohm, N-Channel Power. MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced. IRFP A, V, Ohm, N-channel Power MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced. IRFP, SiHFP Vishay Siliconix. FEATURES. • Dynamic dV/dt Rating. • Repetitive Avalanche Rated. • Isolated Central Mounting Hole.
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These dimensions are measured at the outermost extremes of the plastic body. Contour of slot optional.
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IRFP 데이터시트(PDF) – Vishay Siliconix
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Mold flash shall not exceed 0. Drain Current Current regulator Same type as D. Repetitive rating; pulse width limited by maximum junction temperature see fig. Customers using or selling Vishay products not expressly indicated datashet use in such applications do so at their own risk.
Xian and Mingxin actually photo. Case Temperature tr td off tf Fig. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
Please note that some Vishay documentation may still make reference to the IEC definition. It also provides greater creepage distance between pins to meet the requirements of most safety datashewt.
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Lead finish uncontrolled in L1. Thermal pad contour optional with dimensions D1 and E1. Products may be manufactured at one of several qualified locations.